Semiconductor devices with duplicated die bond pads and associated device packages and methods of manufacture

ABSTRACT

Semiconductor devices with duplicated die bond pads and associated device packages and methods of manufacture are disclosed herein. In one embodiment, a semiconductor device package includes a plurality of package contacts and a semiconductor die having a plurality of first die bond pads, a plurality of second die bond pads, and a plurality of duplicate die bond pads having the same pin assignments as the first die bond pads. The semiconductor die further includes an integrated circuit operably coupled to the package contacts via the plurality of first die bond pads and either the second die bond pads or the duplicate die bond pads, but not both. The integrated circuit is configured to be programmed into one of (1) a first pad state in which the first and second die bond pads are enabled for use with the package contacts and (2) a second pad state in which the first and duplicate die bond pads are enabled for use with the package contacts.

CROSS-REFERENCE TO RELATED APPLICATIONS

This application is a continuation of U.S. application Ser. No.16/455,590, filed Jun. 27, 2019, now U.S. Pat. No. 11,107,795; which isa continuation of U.S. application Ser. No. 15/829,428, filed Dec. 1,2017, now U.S. Pat. No. 10,388,630; which is a divisional of U.S.application Ser. No. 14/995,925, filed Jan. 14, 2016, now U.S. Pat. No.9,875,993; each of which is incorporated herein by reference in itsentirety.

TECHNICAL FIELD

The disclosed embodiments relate to semiconductor devices, includingsemiconductor device packages, such as memory device packages, havingduplicate die bond pads that are selectively coupled to external packagecontacts.

BACKGROUND

A memory device package typically includes a semiconductor memory dieencased in a plastic or ceramic casing, and package contacts that enablethe device package to be electrically connected to a printed circuitboard (PCB). Memory device packages can have package contacts that comein many different forms. FIG. 1A shows one device package 100 a havingpackage contacts in the form of metal leads 102 that are connected to anunderlying PCB 103. The metal leads 102 are arranged in a lead frame 104and extend through a package casing 105 where they connect to a memorydie 106 within the package casing 105. Wirebonds 108 electricallyconnect individual leads 102 to individual die bond pads 107 on an upperside of the memory die 106, thereby electrically connecting the memorydie 106 to the PCB 103. The device package 100 a shown in FIG. 1A iscommonly referred to as a small outline integrated circuit (SOIC)package.

FIG. 1B shows a different memory device package 100 b having packagecontacts in the form of contact pads 112 bonded to the PCB 103 generallybeneath the device package 100 b via metal solder bumps 115. The contactpads 112 are formed on a support substrate 114 that carries the memorydie 106. The support substrate 114 includes multiple levels ofconductive traces (not shown) that connect the contact pads 112 to thecorresponding wirebonds 108 and die bond pads 109 on the memory die 106.The device package 100 b shown in FIG. 1B is commonly referred to as aball grid array (BGA) package.

One difference between the BGA package 100 b of FIG. 1B and the SOICpackage 100 a of FIG. 1A is that the BGA package uses the supportsubstrate 114 in lieu of the metal leads 102 to route electricalconnections. An advantage that this provides is a more compact footprintthan the SOIC package 100 a due to the package contact pads 112 beingwithin planform of the memory die 106. Additionally, it is easier toroute electrical connections using the substrate traces of the BGApackage 100 b rather than the metal leads 102, which can only be placedalong the perimeter of the die 106. A disadvantage of the BGAconfiguration, however, is that the support substrate 114 is moreexpensive to manufacture than the lead frame 104, and thus increases therelative cost of the BGA package 100 b. To keep manufacturing costs low,some device manufactures choose to use an SOIC package, while othermanufactures choose a BGA design for a reduced footprint and lesscomplicated die bond pad layout. In either case, the memory die 106 ofthe BGA and SOIC packages can be substantially identical, except for thelayout of the corresponding die bond pads 107 and 109.

BRIEF DESCRIPTION OF THE DRAWINGS

FIGS. 1A and 1B are cross-sectional views of memory device packages inaccordance with prior art.

FIG. 2 is a top view of a memory die configured in accordance with anembodiment of the present technology.

FIG. 3A is a cross-sectional side view and FIG. 3B is a top view of amemory device package that includes the memory die configured in a firstpad state in accordance with an embodiment of the present technology.

FIG. 4A is a cross-sectional side view and FIG. 4B is a top view of amemory device package that includes the memory die configured in a firstpad state in accordance with another embodiment of the presenttechnology.

FIG. 5 is a schematic diagram showing an integrated circuit of a memorydie configured in accordance with an embodiment of the presenttechnology.

FIG. 6 is a block diagram illustrating a method of manufacturing asemiconductor device package in accordance with an embodiment of thepresent technology.

FIG. 7 is a schematic view of a system that includes a semiconductordevice in accordance with embodiments of the present technology.

DETAILED DESCRIPTION

Specific details of various embodiments of semiconductor devices withduplicated bond pads are described herein, along with related methods,devices, and systems. The term “semiconductor device” generally refersto a solid-state device that includes one or more semiconductormaterials. A semiconductor device can include, for example, asemiconductor substrate, wafer, or die that is singulated from a waferor substrate. Throughout the disclosure, semiconductor devices aregenerally described in the context of semiconductor dies; however,semiconductor devices are not limited to semiconductor dies.

A semiconductor device can also include a “semiconductor device package”comprising one or more semiconductor dies incorporated into the package.A semiconductor device package can include a housing or casing thatpartially or completely encapsulates one or more semiconductor devices.A semiconductor device package can also include an interposer substratethat carries one or more semiconductor devices and is attached to orotherwise incorporated into the package. The term “semiconductor deviceassembly” can refer to an assembly of one or more semiconductor devices,semiconductor device packages, and/or substrates (e.g., interposer,support, or other suitable substrates).

In the illustrated embodiments described below, semiconductor devicesare described in the context of memory devices and memory devicepackages that include such devices. The invention, however, is notlimited to memory dies and memory device packages that include suchmemory dies. For example, some embodiments of semiconductor deviceassemblies and packages can include processors, logic dies,light-emitting dies, analog circuit dies, etc. Further, a person skilledin the relevant art will also understand that the new technology mayhave additional embodiments and that the technology may be practicedwithout several of the details of the embodiments described below withreference to FIGS. 2-7 .

As used herein, the terms “vertical,” “lateral,” “upper,” and “lower”can refer to relative directions or positions of features in thesemiconductor device in view of the orientation shown in the Figures.For example, “upper” or “uppermost” can refer to a feature positionedcloser to the top of a page than another feature. These terms, however,should be construed broadly to include semiconductor devices havingother orientations, such as inverted or inclined orientations wheretop/bottom, over/under, above/below, up/down, and left/right can beinterchanged depending on the orientation.

FIG. 2 is a top view of a memory die 210 configured in accordance withan embodiment of the present technology. The memory die 210 includes anactive surface 208 and separate groups of first die bond pads 224(“first die pads 224”), second die bond pads 225 (“second die pads225”), and third die bond pads 226 (“duplicate die pads 226”) formed onthe active surface 208 within the perimeter of the memory die 210. Thefirst die pads 224 are proximate to first and second die corner regions214 a and 214 b along a first die edge 212 a. The second die pads 225are positioned medially along the first die edge 212 a between the firstand second die corner regions 214 a and 214 b. The duplicate die pads226 are proximate to third and fourth die corner regions 214 c and 214 dalong a second die edge 212 b opposite the first die edge 212 a.

The first die pads 224 have dedicated first pin assignments 231, thesecond die pads 225 have dedicated second pin assignments 232, and theduplicate die pads 226 have the same dedicated second pin assignments232 (i.e., duplicated pin assignments) as the second bond pads 225. Thefirst and second pin assignments 231 and 232 correspond to theassignments of specific pads, traces, or other connection sites on asupport substrate (not shown), such as a PCB, to which a device packagecontaining the memory die 210 is ultimately attached. In the illustratedembodiment, the first and second pin assignments 231 and 232 includeinput/output (I/O) or DQ pins. More specifically, the first pinassignments 231 include DQ0-DQ3 pins, and the second pin assignments 232include DQ4-DQ7 pins. In use, the DQ pins can input and/or output dataover internal data lines (not shown) of the memory die 210 for reading,programming (e.g., writing), or otherwise accessing data from the memorydie 210. The memory die 210 further includes additional die bond pads227 having other dedicated pin assignments. For example, in theembodiment illustrated in FIG. 2 , these other pin assignments includeV_(SS), V_(PP), V_(CCA) pins for providing power supply and referencevoltages, pin CK for providing a clock signal, and pins SB₀ and SB₁ forproviding chip select signals. Although not shown in the illustratedembodiments for purposes of clarity, the memory die 210 can includeadditional die bond pads having additional pins assignments, such asreset and other pins. In these and other embodiments, some of the diebond pads 227 may be omitted, one or both of the pin assignments 231 and232 may be greater or fewer in number, and/or one or both of the pinassignments 231 and 232 may be assigned to additional or alternatefunctions (e.g., control signaling functions in addition to or in lieuof data line communication).

The memory die 210 includes various types of semiconductor componentsand functional features. In the embodiment illustrated in FIG. 2 , thememory die 210 includes an integrated circuit 250 (shown schematically)having non-volatile memory and related circuitry that together form aNOR flash-based memory. In other embodiments, the memory die can includesemiconductor components and functional features that form other typesof memory devices such as NAND flash-based memory, dynamic random-accessmemory (DRAM), static random-access memory (SRAM), and/or other forms ofintegrated circuit memory. In these and other embodiments, the memorydie 210 can include die bond pads having dedicated pin assignments for aspecific memory configuration. For example, a DRAM die can include diebond pads assigned to command, control, and address pins.

In operation, the integrated circuit 250 is configured to be programmedinto at least a first pad state or a second pad state. In the first padstate, the integrated circuit enables the first and second die pads 224and 225 for use. In the second pad state, the integrated circuit 250enables the first and duplicate die pads 224 and 226 for use.

FIG. 3A is a cross-sectional side view and FIG. 3B is a top view of amemory device package 300 (e.g., a BGA package) that includes the memorydie 210 configured in the first pad state. Referring to FIG. 3A, thememory device package 300 includes a package substrate 330 carrying thememory die 210, a package casing 332 at least partially encapsulating orotherwise housing the memory die 210, and a plurality of packagecontacts 334 (e.g., bond pads) adjacent a bottom side 335 of the supportsubstrate 330. The support substrate 330 includes a top side 337opposite the bottom side 335, a plurality of intermediary bond pads 339coupled to the memory die 210 via individual wirebonds 340 (only onewirebond 340 and corresponding intermediary bond pad 339 is visible inFIG. 3A), and a plurality of conductive traces 342 (shown schematically)coupling the intermediary bond pads 339 with corresponding packagecontacts 334. The package contacts 334 can be bonded to correspondingcontacts (not shown) on a PCB 350 or other suitable substrate via, e.g.,solder bumps 352.

Referring to FIG. 3B, the package casing 332 (FIG. 3A) has been removedfrom the device package 300 (FIG. 3A) to show the connections betweenthe intermediary bond pads 339 and the memory die 210 in further detail.More specifically, the intermediary bond pads 339 are connected to thefirst and second die pads 224 and 225 via the individual wirebonds 340.The wirebonds 340 also connect the intermediary bond pads 339 to theother die pads 227 located along the first die edge 212 a.

In the first pad state shown in FIGS. 3A and 3B, the die pads 224, 225,and 227 along the first die edge 212 a are enabled for use. In oneaspect of this embodiment, the memory device package 300 can have areduced footprint because the wirebonds 340 are only along the first dieedge 212 a and not along the second die edge 212 b unlike other devicepackages requiring wirebonds at opposite die edges. In a related aspectof this embodiment, the length of the bond wires 340 is minimized due tothe close proximity of the intermediary bond pads 339 to thecorresponding die pads 224, 225 and 227. Minimizing the length of thebond wires 340 can, for example, reduce electrical resistance, improvesignal quality, reduce or eliminate timing skew, and/or provide otherimprovements in electrical performance (e.g., increased signalprocessing speed).

FIG. 4A is a cross-sectional side view and FIG. 4B is a top view of amemory device package 400 (e.g., an SOIC package) that includes thememory die 210 configured in the second pad state. Referring to FIG. 4A,the memory device package 400 includes a package casing 432 at leastpartially encapsulating the memory die 210 and a plurality of packagecontacts, or metal leads 470, bonded to substrate contacts (not shown)on a PCB 450 or other suitable support substrate. The metal leads 470extend through the package casing 432 and are wirebonded to the memorydie 210 via individual wirebonds 440.

Referring to FIG. 4B, the package casing 432 (FIG. 4A) has been removedfrom the device package 400 to show the connections between the metalleads 470 and the memory die 210 in further detail. More specifically,the metal leads 470 are connected to the first and duplicate die pads224 and 226 via the individual wirebonds 440. The wirebonds 440 alsoconnect the metal leads 470 to individual ones of the die bond pads 227located proximate the die corner regions 214 a-d and one of the die bondpads 227 along the first die edge 212 a assigned to the clock pin CK.

In the second pad state shown in FIGS. 4A and 4B, the die pads 224, 226,and 227 proximate the corner regions 214 a-d are enabled for use. In oneaspect of this embodiment, the memory die 210 of the device package 400is identical to the memory die 210 of the device package 300 (FIGS. 3Aand 3B). Thus, one advantage of the memory die 210 and othersemiconductor devices configured in accordance with the variousembodiments is that they give device manufacturers the ability toaccommodate different packaging types by simply programming the deviceto a particular pad state. This, in turn, simplifies devicemanufacturing and reduces related costs.

FIG. 5 is a schematic diagram of the memory die 210 showing theintegrated circuit 250 configured in accordance with an embodiment ofthe present technology. The integrated circuit 250 includes anon-volatile memory 552, control logic 554 operably coupled to thenon-volatile memory 552, and a plurality of conductive lines 564 (e.g.,traces and/or buried signal lines) operably coupling each of theindividual die pads 224-227 to the control logic 554 and/or directly tothe non-volatile memory 552. Each of the conductive lines 564 isassociated with one of the pin assignments shown in FIG. 2 .

In the embodiment illustrated in FIG. 5 , the non-volatile memory 552includes a region of content-addressable memory (CAM) 558 (“CAM region558”). In one embodiment, the CAM region 558 can be a portion of memoryseparate from a main memory module 560 containing, e.g., the main memorypages, blocks, etc. of the memory die 210. In another embodiment, adifferent type of non-volatile memory or a dedicated portion of the mainmemory module can be used in lieu of the CAM region 558.

In operation, the CAM region 558 is configured to store a value (e.g., amultiple digit binary value) indicative of a particular pad state. Inone embodiment, the CAM region 558 can store a binary value of “10”indicating that the memory die 210 is in the first pad state (i.e., thefirst and second die pads 224 and 225 are enabled for use) and a binaryvalue of “01” indicating that the memory die is in the second pad state(i.e., the first and duplicate die pads 224 and 226 are enabled foruse). In some embodiments, the CAM region 558 can store valuescorresponding to additional or alternate pad states. For example, in oneembodiment, the CAM region 558 can store a binary value of “00”indicating a third pad state in which only the first die pads 224 areenabled for use. In such an embodiment, the third pad state can be usedfor testing the integrated circuit 250 before finally programming thememory die 210 into the first pad state, the second pad state, oranother pad state. In one embodiment, the CAM region 558 can beprogrammed via a pad programming signal received over one or multiplesones of the die bond pads 224-227.

The control logic 554 can include, for example, one or moremultiplexers, decoders, buffers, address registers, data out/data inregisters, etc. for operating the non-volatile memory 552. In theembodiment illustrated in FIG. 5 , the control logic 554 includes aplurality of driver circuits 562 configured to drive signals over atleast some of the individual die pads 224-226. In one embodiment, thecorresponding driver circuits can be enabled/disabled according to thepad state of the second and duplicate bond pads 225 and 226, i.e.,according to whether the device package is programmed for a BGAconfiguration or an SOIC configuration. The driver circuits associatedwith the first die pads 224, however, are enabled in both of the firstand second pad states.

FIG. 6 is a block diagram illustrating a method 600 of manufacturing asemiconductor device package in accordance with an embodiment of thepresent technology. The method includes selectively connectingindividual ones of the die bond pads 224-227 to corresponding packagecontacts of a device package (block 681), such as the package contactsof one of the device packages 300 and 400 shown in FIGS. 3A and 4A,respectively. More specifically, the first die bond pads 224 can beconnected to a first set of the package contacts of the device package,while only one group of either the second die pads 225 or the duplicatedie pads 226 is connected to another set of the package contacts.

The method 600 further includes programming a pad state of the memorydie 210 (block 682). For example, the integrated circuit 250 can beprogrammed via the CAM region 558 of FIG. 5 . When the CAM region 558stores a value indicative of a first pad state, the second die bond pads225 are enabled for use while the duplicate die bond pads 226 are notenabled. When the CAM region 558 stores a value indicative of a secondpad state, the duplicate die bond pads 226 are enabled for use while thesecond die bond pads 225 are not enabled. In some embodiments, themethod 600 can include disabling the non-selected die bond pads (block683). For example, as discussed above, the non-selected die bond padscan be disabled by powering down, disconnecting, or otherwise suspendingoperation of their corresponding driver circuits.

In certain embodiments, the pad state of the memory die 210 isprogrammed before a die packaging stage using, e.g., a probe card thatdirectly contacts one or more the die pads 224-227 before a devicepackaging stage. In additional or alternate embodiments, the pad stateis programmed into the memory die 210 during or after a packaging stage.In one embodiment, the memory die 210 is permanently programmed by thedevice manufacturer, and the memory die 210 cannot be re-programmed bythe device customer and/or the device manufacturer. In otherembodiments, the memory die 210 can be programmed and/or re-programmedby the device manufacturer and/or the device customer.

Any one of the semiconductor devices and semiconductor device packagesdescribed above with reference to FIGS. 2-6 can be incorporated into anyof a myriad of larger and/or more complex systems, a representativeexample of which is system 770 shown schematically in FIG. 7 . Thesystem 770 can include a semiconductor device 700, a power source 772, adriver 774, a processor 776, and/or other subsystems or components 778.The semiconductor device 700 can include features generally similar tothose of the semiconductor devices described above, as well asadditional features such as heat transfer structures that enhance heatdissipation. The resulting system 770 can perform any of a wide varietyof functions such as memory storage, data processing, and/or othersuitable functions. Accordingly, representative systems 770 can include,without limitation, hand-held devices (e.g., mobile phones, tablets,digital readers, and digital audio players), computers, vehicle andother machines, and appliances. Components of the system 770 may behoused in a single unit or distributed over multiple, interconnectedunits (e.g., through a communications network). The components of thesystem 770 can also include remote devices and any of a wide variety ofcomputer readable media.

From the foregoing, it will be appreciated that specific embodiments ofthe technology have been described herein for purposes of illustrationbut that various modifications may be made without deviating from thedisclosure. For example, in some embodiments, the various die bond padsof the memory die can be positioned and/or programmed into certainstates for accommodating other types of device package configurations inaddition to or in lieu of BGA and/or SOIC configurations. Such devicepackage configurations can include, for example, dual in-line packages(DIP), pin grid arrays (PGA), plastic leaded chip carriers (PLCC), quadflat packages (QFP), and/or thin small outline packages (TSOP)configurations. Further, semiconductor dies configured in accordancewith certain embodiments of the present technology can include one ormore additional sets of die bond pads having pin assignments (e.g.,triplicate pin assignments) dedicated to the same pin assignments as thesecond and duplicate die pads 225 and 226 (FIG. 2 ). In at least some ofthese embodiments, the corresponding die bond pads can be arranged toaccommodate three or more different types of package configurations.Moreover, although advantages associated with certain embodiments of thenew technology have been described in the context of those embodiments,other embodiments may also exhibit such advantages, and not allembodiments need necessarily exhibit such advantages to fall within thescope of the technology. Accordingly, the disclosure and associatedtechnology can encompass other embodiments not expressly shown ordescribed herein.

We claim:
 1. A semiconductor device, comprising: a plurality of drivercircuits, each of the plurality of driver circuits corresponding to oneof a plurality of driver circuit groups, each of the plurality of drivercircuit groups having dedicated pin assignments; and an integratedcircuit operably coupled to the plurality of driver circuits via one ofa plurality of subsets of the plurality of driver circuit groups,wherein the integrated circuit is configured to be programmed into oneof a plurality of states, each of the plurality of states correspondingto a different one of the plurality of subsets being enabled.
 2. Thesemiconductor device of claim 1, wherein the integrated circuit isfurther configured to: disable a driver circuit group that is not in theone of the plurality of subsets enabled.
 3. The semiconductor device ofclaim 1, wherein the plurality of states comprises more than two states.4. The semiconductor device of claim 1, wherein the plurality of statescomprises three states, wherein the plurality of driver circuit groupscomprises three driver circuit groups, and wherein a first state of thethree states corresponds to a first one and a third one of the threedriver circuit groups being enabled, wherein a second state of the threestates corresponds to a second one and the third one of the three drivercircuit groups being enabled, and wherein a third state of the threestates corresponds to only the first one of the three driver circuitgroups being enabled.
 5. The semiconductor device of claim 1 wherein theintegrated circuit includes non-volatile memory, and wherein thenon-volatile memory is configured to store a value indicative of the oneof the plurality of states into which the integrated circuit isprogrammed.
 6. The semiconductor device of claim 1 wherein theintegrated circuit includes a memory component and a plurality of datalines for accessing the memory component, and wherein the dedicated pinassignments of each of the plurality of driver circuit groups isassociated with at least one of the data lines.
 7. The semiconductordevice of claim 1 wherein at least two of the plurality of drivercircuit groups have the same dedicated pin assignments.
 8. Asemiconductor device assembly comprising the semiconductor device ofclaim 1, and further comprising: a package substrate on which thesemiconductor device is disposed, the package substrate including: aplurality of intermediate bond pads wirebonded to corresponding bondpads of the semiconductor device, the corresponding bond pads of thesemiconductor device corresponding to the one of the plurality ofsubsets enabled for use, a plurality of package contacts formed beneaththe semiconductor device, and a plurality of conductive traceselectrically coupling the intermediate bond pads to the packagecontacts.
 9. A semiconductor device assembly comprising thesemiconductor device of claim 1, and further comprising: a casing atleast partially encapsulating the semiconductor device, and packagecontacts including metal leads extending through the package casing andwirebonded to corresponding bond pads of the semiconductor device, thecorresponding bond pads of the semiconductor device corresponding to theone of the plurality of subsets enabled for use.
 10. A semiconductordevice comprising: a plurality of driver circuit groups, wherein atleast two of the plurality of driver circuit groups share a same set ofpin assignments, wherein the semiconductor device is configured toselectively enable one of the at least two of the plurality of drivercircuit groups and to selectively disable another one of the at leasttwo of the plurality of driver circuit groups.
 11. The semiconductordevice of claim 10, further comprising an integrated circuit includingnon-volatile memory, and wherein the non-volatile memory is configuredto store a value indicative of the one of the at least two of theplurality of driver circuit groups which is enabled.
 12. Thesemiconductor device of claim 10, further comprising an integratedcircuit including a memory component and a plurality of data lines foraccessing the memory component, and wherein the same set of pinassignments of the plurality of driver circuit groups is associated withat least one of the data lines.
 13. A method of manufacturing asemiconductor device package, comprising: selectively connecting packagecontacts of the semiconductor device package to a semiconductor dieforming a part of the semiconductor device package, wherein thesemiconductor die includes a plurality of driver circuit groups eachhaving dedicated pin assignments, wherein selectively connecting thepackage contacts includes— connecting individual package contacts to oneof a plurality of subsets of the plurality of driver circuit groups, andprogramming the semiconductor die into one of a plurality of states,each of the plurality of states corresponding to a different one of theplurality of subsets being enabled.
 14. The method of claim 13, whereineach of the plurality of states corresponds to one or more drivercircuit groups not enabled for use being disabled.
 15. The method ofclaim 13, wherein the plurality of states comprises more than twostates.
 16. The method of claim 13, wherein the plurality of statescomprises three states, wherein the plurality of driver circuit groupscomprises three driver circuit groups, and wherein a first state of thethree states corresponds to a first one and a third one of the threedriver circuit groups being enabled, wherein a second state of the threestates corresponds to a second one and the third one of the three drivercircuit groups being enabled, and wherein a third state of the threestates corresponds to only the first one of the three driver circuitgroups being enabled.
 17. The method of claim 13 wherein thesemiconductor die includes non-volatile memory, and further comprisingstoring a value indicative of the one of the plurality of states intowhich the semiconductor die is programmed in the non-volatile memory.18. The method of claim 13 wherein at least two of the plurality ofdriver circuit groups have the same dedicated pin assignments.